Description

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input and output matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input and output matched

• Typical pulsed CW performance, 4100 MHz, 48 V,

10 µs pulse width, 100 µs PP

- Output power at P3dB = 235 W

- Gain = 10 dB

- Efficiency = 45

• Capable of handling 10:1 VSWR @48 V, 30 W

(WCDMA) output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant