Description

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high

electron mobility transistor (HEMT) for use in multi-standard

cellular power amplifier applications. It features input and

output matching, high efficiency, and a thermally-enhanced

package with earless flange.

Features

• GaN on SiC HEMT technology

• Asymmetric Doherty design

- Main: P3dB = 200 W typ

- Peak: P3dB = 280 W typ

• Typical pulsed CW performance, 3800 MHz, 48 V,

combined outputs, Doherty @ P3dB, 10 µs, 10

duty cycle

- Output power = 400 W

- Drain efficiency = 62

- Gain = 12 dB

• Capable of handling 10:1 VSWR at 48 V, 63 W

(WCDMA)output power

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Pb-free and RoHS compliant