Description

Cree’s CMPA5259080S is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier design approach enabling high power and power added efficiency to

be achieved in a 7 mm x 7 mm surface mount (QFN package).

Features

• >48 Typical Power Added Efficiency

• 29 dB Small Signal Gain

• 110 W Typical PSAT

• Operation up to 40 V

• High Breakdown Voltage

• High Temperature Operation

Note: Features are typical performance across

frequency under 25°C operation. Please reference

performance charts for additional details.

Applications

• Civil and Military Pulsed

Radar Amplifiers