Description

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate

length fabrication process. GaN-on-SiC has superior properties

compared to silicon, gallium arsenide or GaN-on-Si, including higher

breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and

wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

Features

• 27 dB Small Signal Gain

• 30 W Typical PSAT

• Operation up to 40 V

• High Breakdown Voltage

• High Temperature Operation

Applications

• Satellite Communications Uplink