Description

Wolfspeed’s CMPA1C1D060D is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC) on a Silicon Carbide substrate, using a

0.25 μm gate length fabrication process. GaN-on-SiC has superior

properties compared to silicon, gallium arsenide or GaN-on-Si,

including higher breakdown voltage, higher saturated electron drift

velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si, GaAs,

and GaN-on-Si transistors.

Features

• 26 dB Small Signal Gain

• 60 W Typical PSAT

• Operation up to 40 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.209 x 0.240 x 0.004 inches

Applications

• Satellite Communications Uplink

• PTP Radio