Description

CGHV35060MP is a 60 W input matched, gallium nitride (GaN) high electron mobility

transistor (HEMT) optimized for S-Band performance. The CGHV35060MP is suitable for

typical bands of 2.7-3.1 GHz and 3.1-3.5 GHz while the input matched transistor provides

optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT)

package. The typical performance plots in the datasheet are derived with CGHV35060MP

matched into a 3.1-3.5 GHz high power amplifier.

Features

• Reference design amplifier 3.1 - 3.5 GHz

• 75W Typical output power

• 14.5 dB power gain

• 67 Drain efficiency

• Internally pre-matched on input, unmatched output