Description

Wolfspeed’s CG2H80045D is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT). GaN has superior

properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift

velocity, and higher thermal conductivity. GaN HEMTs offer

greater power density and wider bandwidths compared to Si

and GaAs transistors

Features

• 15 dB Typical Small Signal Gain at 4 GHz

• 12 dB Typical Small Signal Gain at 8 GHz

• 45 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Up to 8 GHz Operation

• High Efficiency

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms