Description

Wolfspeed’s CG2H80015D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT). GaN has superior properties compared

to silicon or gallium arsenide, including higher breakdown voltage,

higher saturated electron drift velocity, and higher thermal

conductivity. GaN HEMTs offer greater power density and wider

bandwidths compared to Si and GaAs transistors.

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Features

• 17 dB Typical Small Signal Gain at 4 GHz

• 12 dB Typical Small Signal Gain at 8 GHz

• 15 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Up to 8 GHz Operation

• High Efficiency