Features

• C3MTM SiC MOSFET technology

• Low parasitic inductance with separate driver source pin

• 7mm of creepage distance between drain and source

• High blocking voltage with low On-resistance

• Fast intrinsic diode with low reverse recovery (Qrr)

• Low output capacitance (60pF)

• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing

• Higher system efficiency

• Increase power density

• Increase system switching frequency

Applications

• Renewable energy

• EV battery chargers

• High voltage DC/DC converters

• Switch Mode Power Supplies