General Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemis proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V

■ Ultra-low Gate charge(Typical 58nC)

■ Fast Switching Capability

■ 100Avalanche Tested

■ Maximum Junction Temperature Range(150℃ )