General Description

This Power MOSFET is produced using Winsemis advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiencyswitch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Features

■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V

■ Ultra-low Gate charge(Typical 43nC)

■ Fast Switching Capability

■ 100Avalanche Tested

■ Maximum Junction Temperature Range(150℃ )