General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

Features

■ 5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V

■ Ultra-low Gate Charge(Typical 32nC)

■ Fast Switching Capability

■ 100Avalanche Tested

■ Maximum Junction Temperature Range(150℃ )