GeneralDescription

This Power MOSFET is produced using Winsemis advanced planar stripe, VDMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

Features

■ 7.5A, 650V, RDS(on)(Max1.3Ω)@VGS=10V

■ Ultra-low Gate charge(Typical 25nC)

■ Fast Switching Capability

■ 100 Avalanche Tested

■ Isolation Voltage(VISO=4000V AC)

■ Maximum Junction Temperature Range(150℃)