General Description

This Power MOSFET is produced using Winsemi’s advanced planarstripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction bridge and full bridge resonant topology line a and half electronic lamp ballast.

Features

■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V

■ Ultra-low Gate Charge(Typical 48nC)

■ Fast Switching Capability

■ 100Avalanche Tested

■ Isolation Voltage ( VISO = 4000V AC )

■ Maximum Junction Temperature Range(150℃)