Middle Power Schottky Barrier Diode

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肖特基二极管

Middle Power Schottky Barrier Diode

文件：732.07 Kbytes Page：4 Pages

Middle Power Schottky Barrier Diode

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High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

High-Current, High-Performance DrMOS Power Module

General Description The AOZ5518QI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve

High Current Chokes

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POWER MOS 7 R FREDFET

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POWER MOS 7 FREDFET

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