位置：首页 > IC中文资料第9305页 > WED8L24513V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
WED8L24513V | Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC |   | |
Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC | | ||
Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC | | ||
Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC | | ||
Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC | | ||
Asynchronous SRAM, 3.3V, 512Kx24 DESCRIPTION The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola | WEDC | | ||
Asynchronous SRAM, 3.3V, 512Kx24 | Microchip 微芯科技 | |
WED8L24513V产品属性
- 类型
描述
- 型号
WED8L24513V
- 制造商
WEDC
- 制造商全称
White Electronic Designs Corporation
- 功能描述
Asynchronous SRAM, 3.3V, 512Kx24
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WEDC |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
WEDC |
23+ |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
WEDC |
QQ咨询 |
BGA |
72 |
全新原装 研究所指定供货商 |
|||
WEDC |
25+ |
BGA |
12500 |
全新原装现货,假一赔十 |
|||
WHITE |
BGA |
1200 |
正品原装--自家现货-实单可谈 |
||||
EDI |
25+ |
1 |
公司优势库存 热卖中! |
||||
WHIT |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
WEDC |
25+23+ |
BGA |
44721 |
绝对原装正品全新进口深圳现货 |
|||
WED |
25+ |
650 |
原厂原装,价格优势 |
||||
WEDC |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
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2018-12-30
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