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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC |   | ||
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE DESCRIPTION The WED2CG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilay | WEDC | | ||
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilay | WEDC | | ||
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilay | WEDC | | ||
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilay | WEDC | | ||
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilay | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 16Mb SyncBurst SRAMs integrate two 512K x 16 SRAMs into a single BGA package to provide 512K x 32 configuration. All synchronous inputs pass through r | WEDC | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM DESCRIPTION The WED2EG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilaye | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through regis | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WEDC SyncBurst — SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. FEATURES ■ Fast clock speed: 166, 150, 1 | WEDC | | ||
512K x 64 Synchronous Pipeline NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K x 32 SRAMs into a single BGA package to provide 512K x 64 configuration. All synchronous inputs pass through register | WEDC | | ||
512K x 64 Synchronous Pipeline NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K x 32 SRAMs into a single BGA package to provide 512K x 64 configuration. All synchronous inputs pass through register | WEDC | | ||
512K x 64 Synchronous Pipeline NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K x 32 SRAMs into a single BGA package to provide 512K x 64 configuration. All synchronous inputs pass through register | WEDC | | ||
512K x 64 Synchronous Pipeline NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K x 32 SRAMs into a single BGA package to provide 512K x 64 configuration. All synchronous inputs pass through register | WEDC | | ||
512K x 64 Synchronous Pipeline NBL SRAM DESCRIPTION The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 32Mb Sync SRAM integrate two 512K x 32 SRAMs into a single BGA package to provide 512K x 64 configuration. All synchronous inputs pass through register | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM DESCRIPTION The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256 | WEDC | | ||
512Kx32 Synchronous Pipeline Burst SRAM | Microchip 微芯科技 | | ||
16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM | Microchip 微芯科技 | | ||
1Mx36 Synchronous Pipeline Burst NBL SRAM | Microchip 微芯科技 | |
WED2产品属性
- 类型
描述
- 型号
WED2
- 制造商
WEDC
- 制造商全称
White Electronic Designs Corporation
- 功能描述
16MB(4x512Kx72) SYNC/SYNC BURST, DUAL KEY DIMM SRAM MODULE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2023+ |
3000 |
进口原装现货 |
|||||
ROK |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
Microsemi(美高森美) |
24+ |
CBGA255 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
WEDC |
24+ |
NA/ |
3268 |
原装现货,当天可交货,原型号开票 |
|||
NULL |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
WENGRY |
25+ |
SMD |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
WHITE |
25+ |
BGA |
1196 |
大量现货库存,提供一站式服务! |
|||
WHITE |
BGA |
3350 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
WHITE |
1923+ |
BGA |
2000 |
自己库存原装正品特价出售 |
|||
WEDC |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
WED2芯片相关品牌
WED2规格书下载地址
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- WE9192A
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- WE9142A
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瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
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只做原装，假一罚十，可开16%增值税票。主营：魏德米勒，TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-4-2WDK4NV魏德米勒端子，深圳现货
只做原装，假一罚十，可开16%增值税票。主营：魏德米勒，TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-4-2WC121只做进口原装现货
瀚佳科技(深圳）有限公司:专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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