CALLING LINE IDENTIFIER

GENERAL DESCRIPTION The Winbond Caller Identification device W91030B, is a low power CMOS integrated circuit used to receive physical layer signals transmitted according to Bellcore and British Telecom (BT) specifications. There are two types of Caller Identifications, the first type is on-hook c

CALLING LINE IDENTIFIER

GENERAL DESCRIPTION The Winbond Caller Identification device W91030B, is a low power CMOS integrated circuit used to receive physical layer signals transmitted according to Bellcore and British Telecom (BT) specifications. There are two types of Caller Identifications, the first type is on-hook c

LOW POWER CMOS INTERGRATED CIRCUIT

GENERAL DESCRIPTION The Winbond Caller Identification device W91031, is a low power CMOS integrated circuit used to receive physical layer signals transmitted according to Bellcore and British Telecom (BT) specifications. There are two types of Caller Identifications, the first type is on-hook ca

Wirewound Power Resistor

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Calling Line Identifier

Calling line identifier

LOW POWER CMOS INTERGRATED CIRCUIT

封装/外壳：24-SOIC（0.295"，7.50mm 宽） 功能：来电显示设备 包装：卷带（TR） 描述：IC TELECOM INTERFACE 24SOP 集成电路（IC） 电信

封装/外壳：24-SOIC（0.295"，7.50mm 宽） 功能：来电显示设备 包装：卷带（TR） 描述：IC TELECOM INTERFACE 24SOP 集成电路（IC） 电信

TONE GENERATOR WITH uC SERIAL INTERFACE

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VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and