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型号：W49180-08 品牌：SEOUL Semiconductor 备注：这里有W49多少钱，2025年最近7天走势，今日出价，今日竞价，W49批发/采购报价，W49行情走势销售排行榜，W49报价。

型号	功能描述	生产厂家&企业	LOGO
W49	3-Phase Motor Driver for CD-ROMs 文件：174.13 Kbytes Page：11 Pages	Ceramate Ceramate Technical	Ceramate
W49F002	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002U	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002U-12B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002U-70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002U-90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UP12B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UP70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UP90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UT12B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UT70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F002UT90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase	WINBOND 华邦电子	WINBOND
W49F020	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020-70	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020-70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020-90	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020-90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020P-70	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020P-70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020P-90	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020P-90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020Q-70	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020Q-70B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020Q-90	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F020Q-90B	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F102	64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F102P40	64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F102P45	64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F102Q40	64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F102Q45	64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase ope	WINBOND 华邦电子	WINBOND
W49F201	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201S-45	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201S-45B	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201S-55	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201S-55B	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201T-45	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201T-45B	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201T-55	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49F201T-55B	128K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase op	WINBOND 华邦电子	WINBOND
W49L102	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-55	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-55B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-70	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-70B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-90	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102P-90B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-55	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-55B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-70	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-70B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-90	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L102Q-90B	64K X 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase	WINBOND 华邦电子	WINBOND
W49L201	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/er	WINBOND 华邦电子	WINBOND
W49L201S-70	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/er	WINBOND 华邦电子	WINBOND
W49L201S-90	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/er	WINBOND 华邦电子	WINBOND
W49L201T-70	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/er	WINBOND 华邦电子	WINBOND
W49L201T-90	256K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/er	WINBOND 华邦电子	WINBOND
W49R9BMB12	Wirewound Resistors, Military/Established Reliability, MIL-PRF-39007 Qualified, Type RWR, Up to S Level, Axial Lead FEATURES • High temperature silicone coated • Complete welded construction • Qualified to MIL-PRF-39007 • Available in non-inductive styles (type N) with Ayrton-Perry winding for lowest reactive components • “S” level failure rate available Note • “Terminal Wire and Winding” type “W” and “	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
W49R9BMBSL	Wirewound Resistors, Military/Established Reliability, MIL-PRF-39007 Qualified, Type RWR, Up to S Level, Axial Lead FEATURES • High temperature silicone coated • Complete welded construction • Qualified to MIL-PRF-39007 • Available in non-inductive styles (type N) with Ayrton-Perry winding for lowest reactive components • “S” level failure rate available Note • “Terminal Wire and Winding” type “W” and “	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
W49R9BMRSL	Wirewound Resistors, Military/Established Reliability, MIL-PRF-39007 Qualified, Type RWR, Up to S Level, Axial Lead FEATURES • High temperature silicone coated • Complete welded construction • Qualified to MIL-PRF-39007 • Available in non-inductive styles (type N) with Ayrton-Perry winding for lowest reactive components • “S” level failure rate available Note • “Terminal Wire and Winding” type “W” and “	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

W49产品属性

类型
描述
型号
W49
制造商
CERAMATE
制造商全称
CERAMATE
功能描述
3-Phase Motor Driver for CD-ROMs

W49供应商更多...

更新时间：2025-8-14 10:46:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	W49F002U-12B	WINBOND	24+	DIP	5000	原装进口现货假一赔十	询价
深圳市芯为科技有限公司	W49C31-20AGT	Rochester	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市亿联芯电子科技有限公司	W49V002FAP	WINBOND/华邦	2023+	PLCC32	6895	原厂全新正品旗舰店优势现货	询价
深圳市科翼源电子有限公司	W49F002UP12B	WINBOND	23+	PLCC-32	2592	原厂原装正品	询价
深圳市富诚威科技有限公司	W49C31-18G	ICWORKS	24+	SOP/16	7500	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市科达星科技有限公司	W49F002UP12B	Winbond	24+	PLCC	26200	原装现货,诚信经营!	询价
深圳市能创芯电子科技有限公司	W49V002FAP	WINBOND	23+	PLCC	6000	原装正品假一罚百!可开增票!	询价
深圳市恒达亿科技有限公司	W49L102Q-70	WINBOND	25+	TSSOP	4500	全新原装、诚信经营、公司现货销售	询价
深圳市凌旭科技有限公司	W49F002U12BN	WINBOND	2016+	DIP	1800	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市锦喆鸿电子有限公司	W49V002FAPZ	WINBOND	25+	PLCC	12588	原装正品,自己库存假一罚十	询价

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W49数据表相关新闻

W5200 是由 WIZnet 公司推出的一款硬件 TCP/IP 协议处理芯片（Network Controller），广泛用于嵌入式以太网通信领域。
W5200 封装: QFN-48-EP(7x7) 80000PCS
2025-5-13
W5300坚持十多年只做原装
W5300坚持十多年只做原装
2025-1-8
W5500
原装正品 W5500 LQFP48 以太网芯片
2021-9-3
W3H32M72E-400SBM 贸泽微优势正品供应
W3H32M72E-400SBM 贸泽微优势正品供应
2020-11-30
W3L1YC474MAT1A
47 pF电容器阵列和网络，1000 pF电容器阵列和网络，0.047 uF电容器阵列和网络，33 pF电容器阵列和网络，0.1 uF SMD / SMT 16 VDC电容器阵列和网络，0.1 uF电容器阵列和网络
2020-7-28
W48C54A-56G，W48S87-27AH，W49F102Q-40，W49V002FAPZ，W4E216646LA-7.5
W48C54A-56G，W48S87-27AH，W49F102Q-40，W49V002FAPZ，W4E216646LA-7.5
2020-3-29

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W5200 是由 WIZnet 公司推出的一款硬件 TCP/IP 协议处理芯片（Network Controller），广泛用于嵌入式以太网通信领域。

W5300坚持十多年只做原装

W5500

W3H32M72E-400SBM 贸泽微优势正品供应

W3L1YC474MAT1A

W48C54A-56G，W48S87-27AH，W49F102Q-40，W49V002FAPZ，W4E216646LA-7.5

DdatasheetPDF页码索引