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W39L020

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

W39L020

3.3-Volt Flash

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase o

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

128K X 8 CMOS FLASH MEMORY

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

256K 횞 8 CMOS FLASH MEMORY

文件:343.51 Kbytes Page:26 Pages

WINBOND

华邦电子

W39L020产品属性

  • 类型

    描述

  • 型号

    W39L020

  • 制造商

    WINBOND

  • 制造商全称

    Winbond

  • 功能描述

    256K 】 8 CMOS FLASH MEMORY

更新时间:2026-7-31 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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23+
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6540
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