型号 功能描述 生产厂家 企业 LOGO 操作
W29C040

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

WINBOND

华邦电子

512K X 8 CMOS FLASH MEMORY

WINBOND

华邦电子

512K ´8 CMOS FLASH MEMORY

WINBOND

华邦电子

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

Atmel

爱特梅尔

4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory

文件:409.44 Kbytes Page:17 Pages

Atmel

爱特梅尔

W29C040产品属性

  • 类型

    描述

  • 型号

    W29C040

  • 制造商

    WINBOND

  • 制造商全称

    Winbond

  • 功能描述

    512K X 8 CMOS FLASH MEMORY

更新时间:2026-1-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WINBOND
24+
DIP
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
WIN
22+
DIP
100000
代理渠道/只做原装/可含税
WIN
25+
DIP
3000
全新原装、诚信经营、公司现货销售
WINBOND/华邦
2025+
DIP32
3000
原装进口价格优 请找坤融电子!
NULL
DIP
3200
原装长期供货!
25+
SOP/DIP
6800
原厂直接发货进口原装
WINBOND
24+
DIP32
3200
专业分销!只做原装现货价优一手货源
WINBOND
24+
DIP
520
WINBOND
17+
6200
100%原装正品现货
WIN
25+
DIP
86910
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

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