型号 功能描述 生产厂家 企业 LOGO 操作

N-channel Power MOSFETs developed using the second generation of MDmesh

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

STMICROELECTRONICS

意法半导体

N-channel Power MOSFETs developed using the second generation of MDmesh

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 158mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:313.5 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:319.98 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2026-1-2 17:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
24+
N/A
13848
原厂可订货,技术支持,直接渠道。可签保供合同
ST
25+23+
TO252
19946
绝对原装正品全新进口深圳现货
ST/意法半导体
21+
TO-263-3
8860
只做原装,质量保证
ST(意法)
24+
32000
全新原厂原装正品现货,低价出售,实单可谈
ST(意法)
25+
5000
只做原装 假一罚百 可开票 可售样
ST
2019+
TO-263
1990
原盒原包装 可BOM配套
ST/意法半导体
23+
N/A
20000
原装STM
19+
TO-263
20000
ST
1725+
?
7500
只做原装进口,假一罚十
ST/意法半导体
23+
TO-263-3
16900
公司只做原装,可来电咨询

W28NM50N数据表相关新闻