256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K x 16 ELECTRICALLY ERASABLE EPROM

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

256K X 16 ELECTRICALLY ERASABLE EPROM

256K X 16 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function. FEATURES • High speed access time: 120/150 nS

4-Megabit 256K x 16 OTP EPROM

Description The AT27C4096 is a low-power, high-performance 4,194,304-bit one-time programmable read only memory (OTP EPROM) organized 256K by 16 bits. It requires a single 5V power supply in normal read mode operation. Any word can be accessed in less than 55 ns, eliminating the need for speed-re

4 Megabit (256 K x 16-Bit) CMOS EPROM

GENERAL DESCRIPTION The Am27C4096 is a 4 Mbit, ultraviolet erasable programmable read-only memory. It is organized as 256 Kwords, operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. The Am27C4096 is ideal for use in 16-bit micropro

4 Megabit (256 K x 16-Bit) CMOS EPROM

GENERAL DESCRIPTION The Am27C4096 is a 4 Mbit, ultraviolet erasable programmable read-only memory. It is organized as 256 Kwords, operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. The Am27C4096 is ideal for use in 16-bit micropro

4-Megabit 256K x 16 OTP EPROM

Description The AT27C4096 is a low-power, high-performance 4,194,304-bit one-time programmable read only memory (OTP EPROM) organized 256K by 16 bits. It requires a single 5V power supply in normal read mode operation. Any word can be accessed in less than 55 ns, eliminating the need for speed-re