HIGH SPEED SRAM

64K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION\nThe W24512A is a high speed, low power CMOS static RAM organized as 65536 ´ 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.FEATURES\n· High speed access time: 15/20/25/35 nS (max.)\n· Low power c

HIGH SPEED SRAM 64KX8

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：200 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：200 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：200 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：214.36 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：200 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：214.36 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：214.36 Kbytes Page：10 Pages

64K X 8 HIGH SPEED CMOS STATIC RAM

文件：214.36 Kbytes Page：10 Pages

512 Kbit Serial I짰 Bus EEPROM

The M24512 is a 512-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 64 K × 8 bits.The M24512-W can operate with a supply voltage from 2.5 V to 5.5 V, the M24512-R and M24512-DR can operate with a supply voltage from 1.8 V to 5.5 V and the M24512-DF can oper

512 Kbit Serial I짰 Bus EEPROM

The M24512 is a 512-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 64 K × 8 bits.The M24512-W can operate with a supply voltage from 2.5 V to 5.5 V, the M24512-R and M24512-DR can operate with a supply voltage from 1.8 V to 5.5 V and the M24512-DF can oper