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W2102

A Major Advance in RTD Technology

[OMEGAFILM] OMEGA® Thinfilm RTD Elements OMEGA can offer Series W and Series F OMEGAFILM® RTD’s encapsulated in hex head machine screws and other metal holders. Please contact OMEGA’s Applications Engineering Department about other custom assemblies.

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W2102

Thin Film DIN Class “A” RTD Elements

文件:1.25947 Mbytes Page:2 Pages

OMEGA

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha

NTE

SYSTEM RESET IC

文件:314.14 Kbytes Page:11 Pages

NJRC

日本无线

SYSTEM RESET IC

文件:314.14 Kbytes Page:11 Pages

NJRC

日本无线

SYSTEM RESET IC

文件:314.14 Kbytes Page:11 Pages

NJRC

日本无线

SYSTEM RESET IC

文件:314.14 Kbytes Page:11 Pages

NJRC

日本无线

W2102产品属性

  • 类型

    描述

  • 型号

    W2102

  • 功能描述

    A Major Advance in RTD Technology

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