DESCRIPTION

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): 5

• Peak wavelength: p = 830 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 18 MHz

• Good spectral matching with CMOS cameras

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902