DESCRIPTION

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): ∅5

• Peak wavelength: λp = 830 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: φ = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: fc = 18 MHz

• Good spectral matching with CMOS cameras

• Compliant to RoHS Directive 2002/95/EC and in

   accordance to WEEE 2002/96/EC

APPLICATIONS

• Infrared radiation source for operation with CMOS

   cameras (illumination)

• High speed IR data transmission

• Smoke-automatic fire detectors