FEATURES

• TrenchFET® Gen IV power MOSFET

• Less than 0.92 mΩ in a package footprint of

10.89 mm2

• 2.5 V rated RDS(on)

• Optimized Qg, Qgd, and Qgd/Qgs ratio reduce

switching related power loss

• 100 Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• Synchronous buck converter

• Battery management

• Load switching