FEATURES

• TrenchFET® Gen IV power MOSFET

• Fully lead (Pb)-free device

• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces

switching related power loss

• Up to 200 A maximum continuous drain current

• 50 smaller footprint than D2PAK (TO-263)

• 100 Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• OR-ing

• Motor drive control

• Battery management