FEATURES

• TrenchFET® Gen IV power MOSFET

• Very low Qg and Qoss reduce power

loss and improve efficiency

• Flexible leads provide resilience to

mechanical stress

• 100 Rg and UIS tested

• Qgd/Qgs ratio < 1 optimizes switching characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters