DESCRIPTION

The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.

The coupling device is designed for signal transmission between two electrically separated circuits.

FEATURES

• Phototransistor optocoupler in a 6 pin DIP package with base connection

• Very high collector emitter breakdown voltage, BVCEO = 300 V

• Isolation rated voltage: 5000 VRMS

• Low coupling capacitance

• High common m;ode transient immunity

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Telecom

• Industrial controls

• Battery powered equipment

• Office machines

• Programmable controllers