DESCRIPTION

The SFH640 has a GaAs infrared emitting diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling

capacitance, and high isolation voltage.

The coupling device is designed for signal transmission

between two electrically separated circuits.

FEATURES

• Phototransistor optocoupler in a 6 pin DIP

package with base connection

• Very high collector emitter breakdown voltage,

BVCEO = 300 V

• Isolation rated voltage: 5000 VRMS

• Low coupling capacitance

• High common m;ode transient immunity

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912