Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：128.889 Kbytes Page：5 Pages

封装/外壳：TO-247-3 包装：管件 描述：80A,170V,TRENCH SCHOTTKY RECT. 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 10 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Low forward voltage drop, low power losses

文件：94.42 Kbytes Page：4 Pages