.040 NPN Phototransistors

PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of Perki

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

High Speed 8-Bit Monolithic A/D Converter

GENERAL DESCRIPTION The AD9002 is an 8-bit, high speed, analog-to-digital converter. The AD9002 is fabricated in an advanced bipolar process that allows operation at sampling rates in excess of 150 megasamples/ second. Functionally, the AD9002 is comprised of 256 parallel comparator stages w

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source m