.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a lensed, side looking, transparent plastic, transfer molded package. These devices are spectrally and mechanically matched to the VTE717x series of IREDs.

Low-cost visible and near-IR photodetection

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Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

Limit Alarms (potentiometer adj.) A-UNIT

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