快速响应硅光电二极管

这种快速响应的硅光电二极管的感光面积为5.16 mm2 ，光谱响应范围为介于400 nm至1150 nm之间。我们的系列快速响应光电二极管设计用于提供低结电容，可实现快速响应能力。它们适合在反向偏压条件下工作，提高响应速度，也可用于光伏模式。这些光电二极管在IR区域有很好的响应，并且与IR发光二极管非常匹配。\n\n功能与优点：\n\n可见光至IR光谱范围\n\n峰值波长：925nm\n\n中等感光面积\n\n线性范围1-2%，可适使用70到 90年\n\n低暗电流\n\n高分流电阻\n\n低结电容\n\n快速响应\n\n符合RoHS指令标准\n\n应用领域：\n\n烟雾检测\n\n条 • 感光面积=5.16mm2• 短路电流=在100fc，2850K时，最小值为30 µA，• 响应度=通常为0.025 A/(W/cm2), 940 nm• 暗电流=在50V反向偏压时，最大值为15nA• 结电容 = 最大值15 pF（反向偏压为15 V时）• 光谱范围 = 400 nm至1150 nm• 峰值光谱响应=925 nm• 峰值波长时的灵敏度=通常为0,55A/W• 角响应=50%响应时成±50度，;

VTP Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.

0.800-INCH SEVEN SEGMENT DISPLAYS

0.800-INCH SEVEN SEGMENT DISPLAYS

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.

0.800-INCH SEVEN SEGMENT DISPLAYS

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