VTP Process Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

快速响应硅光电二极管

这种快速响应的硅光电二极管的感光面积为20.6mm2，光谱响应范围介于400nm和1150nm之间。我们的系列快速响应光电二极管设计用于提供低结电容，可实现快速响应能力。它们适合在反向偏压条件下工作，提高响应速度，也可用于光伏模式。这些光电二极管在IR区域有很好的响应，并且与IR发光二极管非常匹配。\n\n功能与优点：\n\n可见光至IR光谱范围\n\n峰值波长：925nm，感光面积大\n\n线性范围1-2%，可适使用70到 90年\n\n低暗电流\n\n高分流电阻\n\n低结电容\n\n快速响应\n\n符合RoHS标准\n\n应用领域：\n\n烟雾探测\n\n条形码扫描\n\n光照度 • 感光面积 = 20.6 mm2• 短路电流=在100fc，2850K时，最小值为120 µA，• 响应度=通常为 0.14A/(W/cm2)，940nm• 暗电流=在50V反向偏压时，最大值为35nA• 结电容 = 最大值60 pF（反向偏压为15 V时）• 光谱范围 = 400 nm至1150 nm• 峰值光谱响应=925 nm• 峰值波长的灵敏度=通常为0,55A/W• 角响应=50%响应时成±45度，;

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

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Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages