Varactor-Tuned Oscillators

Description HP VTO-8000 Series oscillators use a silicon transistor chip as a negative resistance oscillator. The oscillation frequency is determined by a silicon abrupt varactor diode acting as a voltage-variable capacitor in a thin-film micro stripline resonator. This provides extremely fast

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

Thermally Conductive Adhesive Transfer Tapes

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N-channel power MOS field effect tube

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Dual N-Channel 25-V (D-S) MOSFET

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Dual N-Channel Enhancement Mode MOSFET

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