VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION: The VFT30-28 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28VDC large signal applications up to 400MHz. FEATURES: • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System

VHF POWER MOSFET N-Channel Enhancement Mode

DX SERIES HIGH-DENSITY I/O CONNECTORS

General DX series high-density I/O connector with bellow contacts are perfect for tomorrows miniaturized electronic devices. This new 1.27 mm (0.050) interconnect design enusres positive locking, effortless coupling, terminal protection and EMI reduction in a miniaturized and rugged package. App

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF30-28F is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. FEATURES: • PG = 18 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W(PEP) • Omnigold™ Metal

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. FEATURES: • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W(PEP) • Omnigold™ Metal

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. FEATURES: • PG = 7.0 dB min. at 25 W/400 MHz • hD = 60 Typical • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UFT30-28S is Designed for FEATURES: • Omnigold™ Metalization System