蓝光增强型硅光电二极管

VTB1112H蓝光增强型硅光电二极管的感光面积为1.6 mm2，光谱响应范围介于320nm至1100nm之间。\n\n此系列P-on-N硅平面光电二极管的设计旨在实现在可见光光谱范围内的最佳响应。这些光电二极管主要在光伏模式下使用，但也可以在较小的反向偏压下工作。它们采用极高分流电阻的设计，因此在高增益互阻抗运放电路中使用时偏置量较小。\n\n功能与优点：\n\nUV至近IR光谱范围\n\n在70至90年内保持1%-2%的线性度\n\n极弱暗电流\n\n极高分流电阻\n\n符合RoHS标准\n\n应用领域：\n\n蓝光传感\n\n光照度计\n\n火焰监测\n\n光度测定 • 感光面积 = 1.6 mm2• 短路电流=在100fc，2850K时，最小值为30 µA，• 暗电流 = 最大值100 pA（反向偏压为2 V时）• 结电容 = 典型值0.31 nF（偏压为0 V时）• 光谱范围 = 320 nm至1100 nm• 峰值光谱响应=920 nm• 峰值波长的灵敏度=通常为0,5A/W• 角响应 = ±15度（50%响应时）;

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2112 (UN2112) × 2

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Photo Interrupters

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VTP Process Photodiodes

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