Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier VF = 0.32 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Low forward voltage drop, low power losses

文件：140.54 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 45V TO220 分立半导体产品 二极管 - 整流器 - 阵列

Low forward voltage drop, low power losses

文件：140.54 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 45V TO220 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier VF = 0.32 V at IF = 5 A

Stable leakage current over reverse voltage

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Switchmode Schottky Barrier Power Rectifiers

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Switchmode Schottky Barrier Power Rectifiers

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