型号 功能描述 生产厂家 企业 LOGO 操作
VT2080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

VT2080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

VT2080S

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

VT2080S

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:150.59 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE SCHOTTKY 80V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-220-3 包装:带盒(TB) 描述:DIODE SCHOTTKY 80V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

B - Indoor keyed

文件:224.32 Kbytes Page:5 Pages

LEMO

雷莫

B - Indoor keyed

文件:173.32 Kbytes Page:4 Pages

LEMO

雷莫

B - Indoor keyed

文件:220.53 Kbytes Page:5 Pages

LEMO

雷莫

B - Indoor keyed

文件:174.27 Kbytes Page:4 Pages

LEMO

雷莫

B - Indoor keyed

文件:167.35 Kbytes Page:4 Pages

LEMO

雷莫

VT2080S产品属性

  • 类型

    描述

  • 型号

    VT2080S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Trench MOS Barrier Schottky Rectifier

更新时间:2025-12-26 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VOLTERRA
24+
NA
990000
明嘉莱只做原装正品现货
VTC
25+
18
公司优势库存 热卖中!!
25+
SOP24W
3629
原装优势!房间现货!欢迎来电!
VIC
16+
BGA
1120
进口原装现货/价格优势!
VISHAY/威世
23+
TO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ExcelitasTechnologiesSen
3652
全新原装 货期两周
VT/首科
2450+
SOP-24
6540
只做原厂原装正品终端客户免费申请样品
24+
DIP
3000
自己现货
VISHAY
25+
SOT-89
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
1988
DIP
189
原装现货海量库存欢迎咨询

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