Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.52 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

Low forward voltage drop, low power losses

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.52 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.52 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.52 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 60V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 60V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

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