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VT2价格
参考价格：￥89.8861
型号：VT2 品牌：Carlo Gavazzi 备注：这里有VT2多少钱，2024年最近7天走势，今日出价，今日竞价，VT2批发/采购报价，VT2行情走势销售排行榜，VT2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VT2 | 包装：散装 描述：LVL SEN COND 2 PROBE PTFE 传感器，变送器 浮子，液位传感器 | Carlo Gavazzi Inc. Carlo Gavazzi Inc. |  |   |
Photoconductive Cells and Analog Optoisolators (Vactrols) CustomandSemi-CustomDevices Uponrequest,andwheresufficientquantitiesareinvolved,PerkinElmerOptoelectronicswillteststandardpartstoyouruniquesetofspecifications.Theadvantageoftestingpartsunderactualoperatingconditionsispredictableperformanceintheapplication. Pe | PerkinElmer PerkinElmer |  | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freeaccordingtoI | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifiers FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay. | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay. | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLIC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLIC | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Low forward voltage drop, low power losses FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Low forward voltage drop, low power losses FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：圆柱形罐，径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CRYSTAL 32.7680KHZ 6PF TH 晶体，振荡器，谐振器 晶体 | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 |  | | |
Trench MOS Barrier Schottky Rectifier 文件：105.46 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier 文件：122.37 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier 文件：131 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.6 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.6 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.74 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.6 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
VT2产品属性
- 类型
描述
- 型号
VT2
- 制造商
EDSYN
- 功能描述
Vacuum Storage Tank
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VOLTERRA |
22+ |
QFN |
30000 |
原装正品 |
|||
VOLTERRA |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MAXIM/美信 |
22+ |
38343 |
郑重承诺只做原装进口现货 |
||||
VOLTERRA |
22+/23+ |
QFN |
9800 |
原装进口公司现货假一赔百 |
|||
MAXIM/美信 |
22+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
VOLTERRA |
21+ |
BGA |
6688 |
十年老店,原装正品 |
|||
VISHAY |
23+ |
TO220 |
2550 |
原厂原装正品 |
|||
MAXIM/美信 |
23+ |
QFN |
30000 |
百分百进口原装环保整盘 |
|||
VOLTERRA |
19+ |
XX |
20000 |
1220 |
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- VT300
- VT30_15
- VT-3_13
- VT3
- VT2N4
- VT2N3
- VT2N2
- VT2N1
- VT23N3
- VT23N2
- VT23N1
- VT20N1
- VT2080S
- VT2080C
- VT2060G
- VT2060C
- VT2045C-M3/4W
- VT2045CBP-M3/4W
- VT2045C
- VT2045BP-M3/4W
- VT201
- VT200T
- VT200
- VT-191
- VT1712
- VT1708S
- VT1697SBFQ
- VT1620A
- VT1616
- VT1500
- VT-14
- VT1200
- VT1130M
- VT1101M
- VT1100M
- VT1080S
- VT1080C-E3/4W
- VT1080C
- VT1060C
- VT1045CBP-M3/4W
- VT1045C
- VT1045BP-M3/4W
- VT10-2051
- VT10202C-M3/4W
- VT100B
- VT1000
- VT-100
- VT10_15
- VT-10
- VT10
- VT1
- VT04-GLOBAL
- VT04-CHARGER
- VT04-BATTERY
- VT04A
- VT048A120T025FP
- VT04
- VT02
- VSYTVH
- VSYTVF
- VS-VSUD360CW40
- VS-VSKU71/04
- VS-VSKU56/12
VT2数据表相关新闻
VXA-55-101E
优势渠道
2023-6-21VT1211
VT1211
2023-6-6VT263WFQR-ADJ十年IC，只做原装。
VT263WFQR-ADJ 十年IC，只做原装。
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