型号 功能描述 生产厂家 企业 LOGO 操作
VFT1060C-E3

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

VFT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

VFT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A

VishayVishay Siliconix

威世科技

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR) 描述:DIODE SCHOTTKY 10A 60V ITO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:173.74 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

ISC

无锡固电

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世科技

VFT1060C-E3产品属性

  • 类型

    描述

  • 型号

    VFT1060C-E3

  • 制造商

    Vishay Semiconductors

  • 功能描述

    10A,60V, DUAL TRENCH SKY RECT.

更新时间:2025-10-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
3276
原厂直销,现货供应,账期支持!
VISHAY/威世
25+
TO220F
54648
百分百原装现货 实单必成 欢迎询价
VISHAY/威世
24+
TO220F
990000
明嘉莱只做原装正品现货
VISHAY
17+
TO220F-3
6200
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
Vishay Semiconductor Diodes Di
23+
ITO220AB
9000
原装正品,支持实单
VISHAY/威世通
20+
TO220F-3
38560
原装优势主营型号-可开原型号增税票
VISHAY
1116+
TO220F-3
26
一级代理,专注军工、汽车、医疗、工业、新能源、电力
N/A
23+
CAN
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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