Low forward voltage drop, low power losses

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOT 45V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 10A 45V DUAL TrenchMOS

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Schottky technology

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Low forward voltage drop, low power losses

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