VT102价格

参考价格:¥2.4229

型号:VT10202C-M3/4W 品牌:Vishay Semiconductors 备注:这里有VT102多少钱,2025年最近7天走势,今日出价,今日竞价,VT102批发/采购报价,VT102行情走势销售排行榜,VT102报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packa

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packa

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

• Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Trench MOS Barrier Schottky Rectifier

文件:151.68 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Low forward voltage drop, low power losses

文件:158.42 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOT 200V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Trench MOS Barrier Schottky Rectifier

文件:119.04 Kbytes Page:4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:159.09 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:149 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:159.09 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:TO-220-3 包装:管件 描述:DIODE SCHOTTKY 200V 5A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:138.14 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

Details complets sur le site du fabricant:

Product Description Full details on the manufacturers website: IDEAL INDUSTRIES, INC

DBLECTRODB Lectro Inc

迪贝电子

DBLECTRO

0.5/2.5 GHz UHF LO BUFFER AMPLIFIER

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Riedon

Riedon Powertron

Riedon

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Productwell Precision Elect.CO.,LTD

PRODUCTWELL

VT102产品属性

  • 类型

    描述

  • 型号

    VT102

  • 功能描述

    测试配件 - 其他 VOLTAGE TESTER

  • RoHS

  • 制造商

    Tektronix

  • 附件类型

    Soft Case

  • 颜色

    Gray

  • 设备类型

    Transit Case

  • 产品

    Accessories

更新时间:2025-8-5 18:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VOLTERRA
2016+
QFN
6528
只做进口原装现货!假一赔十!
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VOLTERRA
25+
NA
880000
明嘉莱只做原装正品现货
16+
QFN
2500
进口原装现货/价格优势!
VOLTERRA
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
VISHAY
17+
TO220-3
6200
VOLTERRA
24+
QFN
49
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VOLTERRA
24+
QFN
4897
绝对原装!现货热卖!
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单

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