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VT1价格
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型号：VT1 品牌：Ohmite 备注：这里有VT1多少钱，2024年最近7天走势，今日出价，今日竞价，VT1批发/采购报价，VT1行情走势销售排行榜，VT1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VT1 | 包装：盒 描述：LVL SNSR COND 1 PROBE PTFE 传感器，变送器 浮子，液位传感器 | Carlo Gavazzi Inc. Carlo Gavazzi Inc. |  |   |
HIGH VOLTAGE 50 mA SILICON RECTIFIERS HIGHVOLTAGE50mASILICONRECTIFIERS ●SMALLSIZEMOLDEDPACKAGE ●PRV10,000TO15,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS ●LOWLEAKAGE | edi edi |  | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnologyGen2 •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnologyGen2 •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionsofcompliance pleasesee | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freeaccordingtoI | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •TJ200°Cmax.insolarbypassmodeapplication •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 T | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 T | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HIGH VOLTAGE 50 mA SILICON RECTIFIERS HIGHVOLTAGE50mASILICONRECTIFIERS ●SMALLSIZEMOLDEDPACKAGE ●PRV10,000TO15,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS ●LOWLEAKAGE | edi edi | | | |
HIGH VOLTAGE 50 mA SILICON RECTIFIERS HIGHVOLTAGE50mASILICONRECTIFIERS ●SMALLSIZEMOLDEDPACKAGE ●PRV10,000TO15,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS ●LOWLEAKAGE | edi edi | | | |
SNAP ACTION SWITCH Features •Reliabilityisexcellent. •It’shaslonglifeandmoreoperatingforcecanbe appliedsuchaslightlyforce. •Goodfeelingandmoreleversareapplied. | HIGHLY Highly Electric Co., Ltd |  | | |
6-Channel AC97 Codec with S/PDIF [VIATechnologiesIncorporated] Description VIATechnologies’VT1616TM20-bit∑∆audiocodecconformstotheAC’972.2andS/PDIFOutputspecifications.TheVT1616integratesSampleRateConvertersonallchannelsandcanbeadjustedin1Hzincrements.Thereisaprovisioninhardwarefordown-mi | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
3.3V LVT 16-bit inverting buffer/driver with 30ohm termination resistors 3-State DESCRIPTION The74LVT162240Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisaninverting16-bitbufferthatisidealfordrivingbuslines.ThedevicefeaturesfourOutputEnables(1OE,2OE,3OE,4OE),eachcontrollingfourofthe3-Stateoutputs.The74LV | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
3.3V LVT 16-bit inverting buffer/driver with 30ohm termination resistors 3-State DESCRIPTION The74LVT162240Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisaninverting16-bitbufferthatisidealfordrivingbuslines.ThedevicefeaturesfourOutputEnables(1OE,2OE,3OE,4OE),eachcontrollingfourofthe3-Stateoutputs.The74LV | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V 16-bit buffer/driver with 30ohm termination resistors DESCRIPTION The74LVT162244Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.The74LVT162244Bisdesignedwith30ΩseriesresistanceinboththeHighandLowstatesoftheoutput.Thisdesignreduceslinenoiseinapplicationssuchasmemoryaddressdrivers,clockdrivers | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V 16-bit buffer/driver with 30ohm termination resistors DESCRIPTION The74LVT162244Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.The74LVT162244Bisdesignedwith30ΩseriesresistanceinboththeHighandLowstatesoftheoutput.Thisdesignreduceslinenoiseinapplicationssuchasmemoryaddressdrivers,clockdrivers | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit transceiver with 30ohm termination resistors 3-State DESCRIPTION The74LVT162245Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisa16-bittransceiverfeaturingnon-inverting3-Statebuscompatibleoutputsinbothsendandreceivedirections.Thecontrolfunctionimplementationminimizesexternaltimingrequi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit transceiver with 30ohm termination resistors 3-State DESCRIPTION The74LVT162245Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisa16-bittransceiverfeaturingnon-inverting3-Statebuscompatibleoutputsinbothsendandreceivedirections.Thecontrolfunctionimplementationminimizesexternaltimingrequi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit inverting buffer/driver 3-State DESCRIPTION The74LVT16240Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. FEATURES •16-bitbusinterface •3-Statebuffers •Outputcapability:+64mA/-32mA •TTLinputandoutputswitchinglevels •Inputandoutputinterfacecapabilitytosystemsat5Vsuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit inverting buffer/driver 3-State DESCRIPTION The74LVT16240Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. FEATURES •16-bitbusinterface •3-Statebuffers •Outputcapability:+64mA/-32mA •TTLinputandoutputswitchinglevels •Inputandoutputinterfacecapabilitytosystemsat5Vsuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit buffer/driver 3-State DESCRIPTION The74LVT16244Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. Thisdeviceisa16-bitbufferandlinedriverfeaturingnon-inverting3-Statebusoutputs.Thedevicecanbeusedasfour4-bitbuffers,two8-bitbuffers,orone16-bitbuffer. FEATURES •16- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit buffer/driver 3-State DESCRIPTION The74LVT16244Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. Thisdeviceisa16-bitbufferandlinedriverfeaturingnon-inverting3-Statebusoutputs.Thedevicecanbeusedasfour4-bitbuffers,two8-bitbuffers,orone16-bitbuffer. FEATURES •16- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit buffer/driver 3-State DESCRIPTION The74LVT16244Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. Thisdeviceisa16-bitbufferandlinedriverfeaturingnon-inverting3-Statebusoutputs.Thedevicecanbeusedasfour4-bitbuffers,two8-bitbuffers,orone16-bitbuffer. FEATURES •16- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V ABT 16-bit transceiver 3-State DESCRIPTION The74LVT16245Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. FEATURES •16-bitbidirectionalbusinterface •3-Statebuffers •Outputcapability:+64mA/-32mA •TTLinputandoutputswitchinglevels •Inputandoutputinterfacecapabilitytosyste | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V ABT 16-bit transceiver 3-State DESCRIPTION The74LVT16245Bisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. FEATURES •16-bitbidirectionalbusinterface •3-Statebuffers •Outputcapability:+64mA/-32mA •TTLinputandoutputswitchinglevels •Inputandoutputinterfacecapabilitytosyste | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit transparent D-type latch 3-State DESCRIPTION The74LVT16373Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. Thisdeviceisa16-bittransparentD-typelatchwithnon-inverting3-Statebuscompatibleoutputs.Thedevicecanbeusedastwo8-bitlatchesorone16-bitlatch.Whenenable(E)inputisHigh, | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit transparent D-type latch 3-State DESCRIPTION The74LVT16373Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V. Thisdeviceisa16-bittransparentD-typelatchwithnon-inverting3-Statebuscompatibleoutputs.Thedevicecanbeusedastwo8-bitlatchesorone16-bitlatch.Whenenable(E)inputisHigh, | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit edge-triggered D-type flip-flop 3-State DESCRIPTION The74LVT16374Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisa16-bitedge-triggeredD-typeflip-flopfeaturingnon-inverting3-Stateoutputs.Thedevicecanbeusedastwo8-bitflip-flopsorone16-bitflip-flop.Onthepositivetransition | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
3.3V LVT 16-bit edge-triggered D-type flip-flop 3-State DESCRIPTION The74LVT16374Aisahigh-performanceBiCMOSproductdesignedforVCCoperationat3.3V.Thisdeviceisa16-bitedge-triggeredD-typeflip-flopfeaturingnon-inverting3-Stateoutputs.Thedevicecanbeusedastwo8-bitflip-flopsorone16-bitflip-flop.Onthepositivetransition | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
VT1产品属性
- 类型
描述
- 型号
VT1
- 制造商
Extech Instruments Corporation
- 功能描述
VOLTAGE DETECTOR MULTIFUNCTION
- 制造商
Extech
- 功能描述
Multifunction Voltage Tester
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAXIM/美信 |
24+ |
QFN16 |
11360 |
ADI优势主营型号-原装正品 |
|||
VT |
24+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
MAXIM/美信 |
2023 |
FCQFN-16 |
4500 |
公司原装现货/支持实单 |
|||
XX |
23+ |
BGA |
20000 |
原厂原装正品现货 |
|||
VOLTERRA |
23+ |
QFN |
10500 |
原装元器件供应现货支持。咨询更多现货库存,支持样 |
|||
VOLTERRA |
23+ |
QFN |
12000 |
全新原装,优势现货 |
|||
VIA |
1048+ |
QFP |
460 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VIA |
2016+ |
LQFP128 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VOLTERRA |
08+ |
BGA |
29827 |
进口原带现货 |
|||
MAXIM/美信 |
2052+ |
QFN |
6542 |
只做原装正品现货!或订货假一赔十! |
VT1芯片相关品牌
VT1规格书下载地址
VT1参数引脚图相关
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VT1数据表相关新闻
VT1211
VT1211
2023-6-6VS-SD823C25S20C
VS-SD823C25S20C
2023-3-21VT263WFQR-ADJ十年IC，只做原装。
VT263WFQR-ADJ 十年IC，只做原装。
2020-10-19VUO62-16NO7
VUO62-16NO7,当天发货0755-82732291全新原装现货或门市自取.
2020-9-9VST025N15HS
VST025N15HS，全新原装当天发货或门市自取0755-82732291.
2020-4-26VST012N15HS
VST012N15HS，全新原装当天发货或门市自取0755-82732291.
2020-4-26
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