5.0x3.2mm SMD CMOS/Clipped Sinewave

Microchip's VT-803 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, clipped sine wave or CMOS output, 5th order analog temperature compensated oscillator, operating off a 2.8 to 5.0 volt supply in a hermetically sealed 3.2x5 mm ceramic package. ***The VT-803 is EOL and the al Clipped Sine Wave or CMOS Output\n10.000-52.000 MHz Output\n±100 ppb Temperature Stability\nOptional Enable/Disable Function\nOptional VCXO\nFundamental Crystal Design\nApplications - Femto Cells, Base Stations, IP Networking, GPS, Point to Point Radios, Manpack Radios, Test & Measurement;

Temperature Compensated Crystal Oscillator

文件：598.4 Kbytes Page：8 Pages

TCXO

ROHS

TCXO

ROHS

Temperature Compensated Crystal Oscillator

文件：1.035339 Mbytes Page：9 Pages

包装：卷带（TR） 描述：CUSTOM TCXO 晶体，振荡器，谐振器 振荡器

包装：卷带（TR） 描述：CUSTOM TCXO 晶体，振荡器，谐振器 振荡器

Temperature Compensated Crystal Oscillator

文件：598.4 Kbytes Page：8 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors