Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

Ideal for automated placement

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Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V 1.9A DO214AA 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE SCHOTTKY 100V 1.9A DO214AA 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

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Surface Mount Trench MOS Barrier Schottky Rectifier

文件：94.56 Kbytes Page：4 Pages

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：91.78 Kbytes Page：5 Pages

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：94.56 Kbytes Page：4 Pages

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：91.78 Kbytes Page：5 Pages

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Tilt-To-Load Drum Tumblers Feature Power-Tilt to Enable Easy, Floor-Level Loading

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